Fujimi Area
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Fujimi Area
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Wafer Fabrication

Fujimi Area

 
 




 

    Technology:             

      CMOS process

       D/R: 1.2-0.5 um

       Gate: PolySi, MoSi, WSi, Ti sallicide

       Metal : 1-3 layers

  
   
 
   
 
   



 
 

   
   
   
     
     
 

 
   
 
   

 

  
   

 
Fujimi Area