Wafer Fabrication
Sakata Area
CMOS process
D/R: 0.8-0.35um
Gate: MoSi, WSi
Metal : 1-4 layers
D/R: 0.35-0.25um
Gate: WSi
Metal : 1-5 layers
D/R: 0.18-0.13um
Gate: WSi, CoSi
Metal : 1-6 layers